JPH0745954Y2 - 石英炉芯管装置 - Google Patents
石英炉芯管装置Info
- Publication number
- JPH0745954Y2 JPH0745954Y2 JP1988169994U JP16999488U JPH0745954Y2 JP H0745954 Y2 JPH0745954 Y2 JP H0745954Y2 JP 1988169994 U JP1988169994 U JP 1988169994U JP 16999488 U JP16999488 U JP 16999488U JP H0745954 Y2 JPH0745954 Y2 JP H0745954Y2
- Authority
- JP
- Japan
- Prior art keywords
- core tube
- furnace core
- gas
- mixing chamber
- quartz furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010453 quartz Substances 0.000 title claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 12
- 239000007789 gas Substances 0.000 claims description 17
- 239000012495 reaction gas Substances 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988169994U JPH0745954Y2 (ja) | 1988-12-28 | 1988-12-28 | 石英炉芯管装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988169994U JPH0745954Y2 (ja) | 1988-12-28 | 1988-12-28 | 石英炉芯管装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0289828U JPH0289828U (en]) | 1990-07-17 |
JPH0745954Y2 true JPH0745954Y2 (ja) | 1995-10-18 |
Family
ID=31460550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1988169994U Expired - Lifetime JPH0745954Y2 (ja) | 1988-12-28 | 1988-12-28 | 石英炉芯管装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0745954Y2 (en]) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59104123A (ja) * | 1982-12-07 | 1984-06-15 | Toshiba Corp | 不純物拡散装置 |
JPS6273535U (en]) * | 1985-10-29 | 1987-05-11 | ||
JPS62278273A (ja) * | 1986-05-26 | 1987-12-03 | Nec Corp | プラズマcvd装置 |
JPS63200537A (ja) * | 1987-02-16 | 1988-08-18 | Canon Inc | 酸化シリコン膜形成装置 |
-
1988
- 1988-12-28 JP JP1988169994U patent/JPH0745954Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0289828U (en]) | 1990-07-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5010842A (en) | Apparatus for forming thin film | |
KR100310248B1 (ko) | 기판처리장치 | |
JPH02234419A (ja) | プラズマ電極 | |
JPH0745954Y2 (ja) | 石英炉芯管装置 | |
CN209418475U (zh) | 一种石墨舟舟片、石墨舟及硅片镀膜设备 | |
CN218842322U (zh) | 一种mocvd长晶设备 | |
CN217378026U (zh) | 一种管式pecvd设备 | |
JP3081860B2 (ja) | 化学気相成長装置及び半導体装置の製造方法 | |
JPH0766130A (ja) | 化学的気相成長(cvd)装置 | |
JPH0316120A (ja) | 化学気相成長装置及びそのガスヘッド | |
JP2568185B2 (ja) | 熱処理装置 | |
JP2727106B2 (ja) | 膜形成方法 | |
JPH11150077A (ja) | 半導体ウエハの熱拡散装置 | |
JPH0750272A (ja) | 半導体製造方法及び装置 | |
JPH06818Y2 (ja) | Cvd装置のための基板支持装置 | |
JPH0437126A (ja) | ドライエッチング装置 | |
JPH0538870U (ja) | 減圧cvd用ガスノズル | |
CN114381807A (zh) | 扩散炉 | |
JPS6366394B2 (en]) | ||
JPS6020510A (ja) | 不純物拡散方法 | |
JPS60260126A (ja) | 半導体の拡散装置 | |
JPH01198016A (ja) | 横形プラズマcvd装置 | |
JPS551130A (en) | Furnace core pipe for manufacturing semiconductor | |
JPS62117333A (ja) | プラズマcvd装置用サセプタ | |
JPS61207013A (ja) | 半導体基板用拡散装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |